preliminary BGA430 broad band high gain lna mmic never stop thinking. wireless silicon discretes preliminary data sheet, BGA430, may 2002
edition 2002-05-03 published by infineon technologies ag, st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted char- acteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. in?neon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest in?- neon technologies of?ce in germany or our in?neon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest in?neon technologies of?ce. in?neon technologies components may only be used in life-support devices or systems with the express written approval of in?neon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
for questions on technology, delivery and prices please contact the infineon technologies offices in germany or the infineon technologies companies and representatives worldwide: see our webpage at http://www.infineon.com BGA430 preliminary data sheet revision history: 2002-05-03 preliminary previous version: 2002-01-22 page subjects (major changes since last revision) 5 maximum input power specified
preliminary data sheet 4 2002-05-03 esd: electrostatic discharge sensitive device, observe handling precaution! type package marking chip BGA430 sot363 phs t0509 broad band high gain lna BGA430 preliminary features ? high gain |s 21 | 2 : 32 db at 0.9 ghz, 28 db at 2.15 ghz ? low noise figure f 50 w : 2.2 db at 0.9 ghz, 2.4 db at 2.15 ghz ? matched to 50 w ? reverse isolation > 40db ? small sot363 package ? typical supply voltage: 5v ? sieget ? -25 technology applications ? lnb if amplifiers ? catv systems ? set top boxes ? buffer amplifiers for wide band applications description the BGA430 is a broad band high gain amplifier based upon infineon technologies silicon bipolar technology b6hf. housed in a small sot363 package this silicon monolithic microwave integrated circuit (mmic) requires very few external components due to the integrated biasing concept. due to the advanced b6hf process the BGA430 achieves an exceptional low noise figure of 2.4 db and a high gain of 28 db at 2.15 ghz. vps05604 6 3 1 5 4 2 5 gnd1 4 gnd2 6 rfin 2 gnd1 3 rfout 1 vcc bias
BGA430 preliminary data sheet 5 2002-05-03 preliminary maximum ratings note: all voltages refer to gnd-node parameter symbol value unit device voltage v cc 6.5 v device current i d 35 ma current into pin in i b 1ma input power 1) 1) valid for z s =z l =50 w , v cc =5v or v cc =0v p in 10 dbm total power dissipation, t s < 80?c 2) 2) t s is measured on the emitter lead at the soldering point to the pcb p tot 228 mw junction temperature t j 150 ?c ambient temperature range t a -65 ... +150 ?c storage temperature range t stg -65 ... +150 ?c thermal resistance: junction-soldering point r th js 300 k/w electrical characteristics at t a =25?c (measured on application pcb in fig. 2) 1) v cc =5v, unless otherwise specified parameter symbol min. typ. max. unit insertion power gain f=0.9ghz f=2.15ghz |s 21 | 2 32 28 db noise figure (z s =50 w) f=0.9ghz f=2.15ghz nf 2.2 2.4 db output power at 1db gain compression z l =50 w f=0.9ghz f=2.15ghz p -1db 2 3 dbm output third order intercept point z s/l =50 w f=0.9ghz f=2.15ghz oip 3 12 13 dbm input return loss f=0.9ghz f=2.15ghz rl in 20 12 output return loss f=0.9ghz f=2.15ghz rl out 9 15 device current i d 23 ma 1) note: all measurement results are not compensated for pcb losses: 0.05 db at 0.9 ghz, 0.2 db at 2.15 ghz and 0.3 db at 6 ghz at rfin / rfout
BGA430 preliminary data sheet 6 2002-05-03 preliminary matching |s 11 |, |s 22 | = f(f) v cc = 5v 0 1 2 3 4 5 6 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 11 |, |s 22 | [db] s 11 s 22 power gain |s 21 | 2 , g ma = f(f) v cc = 5v 0 1 2 3 4 5 6 0 5 10 15 20 25 30 35 frequency [ghz] |s 21 | 2 , g ma [db] |s 21 | 2 g ma reverse isolation |s 12 | = f(f) v cc = 5v 0 1 2 3 4 5 6 ?50 ?45 ?40 ?35 ?30 ?25 ?20 ?15 ?10 ?5 0 frequency [ghz] |s 12 | [db] stability k, b 1 = f(f) v cc = 5v 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 frequency [ghz] k, b 1 k b1
BGA430 preliminary data sheet 7 2002-05-03 preliminary noise figure f = f(f) z s = 50 w , v cc = 5v 0 0.5 1 1.5 2 2.5 3 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 f [ghz] f [db] power gain |s21| 2 =f(t a ,f) t a = parameter in c, v cc =5 v 0 0.5 1 1.5 2 2.5 3 20 22 24 26 28 30 32 34 f [ghz] |s21| 2 [db] ?40 25 85 output compression point p ?1db =f(t a ,f) t a = parameter in c, v cc =5 v 0.5 1 1.5 2 2.5 3 ?2 ?1 0 1 2 3 4 5 6 f [ghz] p ?1db [dbm] ?40 25 85 output 3rd order intercept point ip 3 =f(t a ,f), t a = parameter in c, v cc = 5 v 0.5 1 1.5 2 2.5 3 8 9 10 11 12 13 14 15 16 f [ghz] ip 3 [dbm] ?40 25 85
BGA430 preliminary data sheet 8 2002-05-03 preliminary typical application figure 1 typical application circuit notes: due to the high gain of the BGA430 rf blocking at the supply pin (v cc ) has to be done very carefully. a broad-band low impedance rf path to gnd has to be provided at v cc . if no appropriate rf blocking is used, rf can couple via the internal power lines to the input and the device might oscillate. pcb layout for the application circuit figure 2 double sided fr4 glass fiber epoxy board, thickness 0.5mm, e r =4.5 5 gnd1 4 gnd2 6 rfin 2 gnd1 3 rfout 1 vcc bias rfin rfout voltage supply c1 c2 c3 c4 c1 c2 c3 c4 BGA430 part list: c1, c2 100 pf coupling capacitors (not used for measurements) c3 100pf c4 100pf ic1 BGA430
BGA430 preliminary data sheet 9 2002-05-03 preliminary package outline tape loading orientation 1.25 0.1 2.1 0.1 0.2 +0.1 0.1 1.3 0.65 0.05 b 0.1 0.9 123 4 5 6 a 0.2 2 acc. to +0.2 din 6784 a m 0.20 0.20 m b 0.1 max +0.1 -0.05 0.15 eha07193 123 4 5 6 phs direction of unreeling top view marking on sot-363 package (for example phs) corresponds to pin 1 of device position in tape: pin 1 opposite of feed hole side
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